← Part I: Electrostatics
Chapter 4

Conductors & Dielectrics

Electrostatic induction, capacitance, polarization, and the displacement field.

4.1 Conductors in Electrostatic Equilibrium

In a perfect conductor, charges redistribute until the electric field is zero everywhere inside. The key electrostatic properties of a conductor in equilibrium are:

$\mathbf{E} = 0$
inside the conductor
$\rho = 0$
no free charge inside; charge resides on surfaces
$V = \text{const}$
the conductor is an equipotential
$\mathbf{E} \perp \text{surface}$
field is normal to the surface just outside
$E_{\rm outside} = \sigma/\epsilon_0$
surface field proportional to surface charge density

Derivation: Boundary Conditions at a Conductor Surface

We rigorously derive the boundary conditions for the electric field at the surface of a perfect conductor in electrostatic equilibrium.

Step 1: Establish $\mathbf{E} = 0$ inside the conductor

In a perfect conductor, free charges move in response to any electric field until equilibrium is reached. At equilibrium, $\mathbf{F} = q\mathbf{E} = 0$ for every free charge, which requires $\mathbf{E} = 0$ everywhere inside the conductor. Since $\nabla\cdot\mathbf{E} = \rho/\epsilon_0 = 0$, the bulk charge density vanishes — all excess charge resides on the surface.

Step 2: The tangential component vanishes — $E^\parallel = 0$

Construct a thin rectangular Amperian loop straddling the surface, with one long side just outside the conductor (length $l$) and the other just inside. Since $\nabla\times\mathbf{E} = 0$:

$$\oint \mathbf{E}\cdot d\boldsymbol{\ell} = E_{\rm outside}^\parallel\,l + 0\cdot l = 0$$

(The inside contribution is zero because $\mathbf{E} = 0$ inside, and the short sides vanish as the loop thickness $\to 0$.)

$$\boxed{E^\parallel_{\rm outside} = 0}$$

The electric field just outside a conductor is purely normal to the surface.

Step 3: The normal component relates to surface charge — Gaussian pillbox

Construct a thin pillbox of area $A$ straddling the surface. Apply Gauss's law:

$$\oint\mathbf{E}\cdot d\mathbf{a} = E_{\rm outside}^\perp A + 0\cdot A = \frac{\sigma A}{\epsilon_0}$$

(The inside face contributes zero flux since $\mathbf{E} = 0$ inside; the curved side contributes nothing as the thickness $\to 0$.)

Step 4: Normal field result

$$\boxed{E^\perp_{\rm outside} = \frac{\sigma}{\epsilon_0}}$$

Note this is $\sigma/\epsilon_0$, not $\sigma/(2\epsilon_0)$ — the factor of 2 difference from an isolated sheet arises because the field inside the conductor is zero (not just pointing in the other direction).

Step 5: The conductor is an equipotential

Since $\mathbf{E} = 0$ inside and $E^\parallel = 0$ on the surface, no work is done moving a charge along any path inside or on the surface:

$$V(\mathbf{b}) - V(\mathbf{a}) = -\int_{\mathbf{a}}^{\mathbf{b}}\mathbf{E}\cdot d\boldsymbol{\ell} = 0$$

for any two points $\mathbf{a}$, $\mathbf{b}$ on or in the conductor. Therefore:

$$\boxed{V = \text{constant throughout the conductor and on its surface}}$$

Step 6: Express $\sigma$ in terms of the potential

Since $E^\perp = -\partial V/\partial n$ (the normal derivative of $V$ at the surface), and $E^\perp = \sigma/\epsilon_0$:

$$\sigma = -\epsilon_0\frac{\partial V}{\partial n}\bigg|_{\rm surface}$$

The surface charge density is determined by the normal derivative of the potential. Where the equipotential surfaces are closely spaced (steep gradient), $\sigma$ is large — charge concentrates at sharp points and edges.

4.1.1 Boundary Conditions

At the interface between two media, the boundary conditions follow from integrating Maxwell's equations across the interface. With surface charge $\sigma$ and surface current $\mathbf{K}$:

Normal component (from Gauss)

$$\epsilon_2 E_{2}^\perp - \epsilon_1 E_1^\perp = \sigma_f$$

Tangential component (from Faraday)

$$E_1^\parallel = E_2^\parallel$$

4.2 Capacitance

The capacitance $C$ of a conductor (or pair of conductors) is defined as the ratio of stored charge to potential:

$$C = \frac{Q}{V} \qquad \text{[Farads = C/V]}$$

Parallel plates

$$C = \frac{\epsilon_0 A}{d}$$

Spherical capacitor

$$C = 4\pi\epsilon_0\frac{ab}{b-a}$$

Cylindrical capacitor

$$C = \frac{2\pi\epsilon_0 L}{\ln(b/a)}$$

The energy stored in a capacitor is:

$$W = \frac{1}{2}CV^2 = \frac{Q^2}{2C} = \frac{1}{2}QV$$

Derivation: Capacitance of a Parallel Plate Capacitor

We derive the capacitance $C = \epsilon_0 A/d$ from first principles using Gauss's law, starting from the charge on the plates.

Step 1: Set up the geometry

Two infinite parallel conducting plates separated by distance $d$, with surface charge $+\sigma$ on the top plate and $-\sigma$ on the bottom plate. The total charge on each plate of area $A$ is $Q = \sigma A$.

Step 2: Find the electric field between the plates using Gauss's law

Choose a Gaussian pillbox straddling the positively charged plate. The field inside the conductor is zero, and the field between the plates points from $+\sigma$ to $-\sigma$:

$$E\cdot A = \frac{\sigma A}{\epsilon_0} \quad\Longrightarrow\quad E = \frac{\sigma}{\epsilon_0}$$

Alternatively, superpose the fields of two infinite sheets: each contributes $\sigma/(2\epsilon_0)$ in the same direction between the plates, giving $E = \sigma/\epsilon_0$. Outside, they cancel.

Step 3: Compute the potential difference

The voltage between the plates is the line integral of $\mathbf{E}$ from the negative plate to the positive plate:

$$V = -\int_{-}^{+}\mathbf{E}\cdot d\boldsymbol{\ell} = Ed = \frac{\sigma d}{\epsilon_0} = \frac{Qd}{\epsilon_0 A}$$

Step 4: Apply the definition of capacitance

$$C = \frac{Q}{V} = \frac{Q}{\frac{Qd}{\epsilon_0 A}} = \frac{\epsilon_0 A}{d}$$

$$\boxed{C = \frac{\epsilon_0 A}{d}}$$

Step 5: Energy stored in the capacitor

Using $W = \frac{1}{2}CV^2$ or equivalently the field energy $W = \frac{\epsilon_0}{2}\int E^2\,d\tau$. The field is uniform with magnitude $E = V/d$ in volume $Ad$:

$$W = \frac{\epsilon_0}{2}E^2\cdot Ad = \frac{\epsilon_0}{2}\frac{V^2}{d^2}\cdot Ad = \frac{\epsilon_0 A}{2d}V^2 = \frac{1}{2}CV^2$$

Both approaches yield the same result, confirming the energy density interpretation $u = \epsilon_0 E^2/2$.

Derivation: Electrostatic Pressure on a Conductor

We derive the force per unit area (electrostatic pressure) on the surface of a charged conductor, showing it equals $\sigma^2/(2\epsilon_0)$.

Step 1: The field at the surface is not the field acting on the surface charge

Just outside the conductor, $E = \sigma/\epsilon_0$. But this is the total field, which includes the contribution of the patch of surface charge we are considering. The force on that patch is due to the field of everything else.

Step 2: Decompose the field into "self" and "other" contributions

A small patch of surface charge $\sigma$ produces a field $\sigma/(2\epsilon_0)$ pointing away from the surface on both sides (like an infinite sheet locally). Call this $\mathbf{E}_{\rm patch}$. The rest of the system produces $\mathbf{E}_{\rm other}$.

Just outside: $E_{\rm other} + \frac{\sigma}{2\epsilon_0} = \frac{\sigma}{\epsilon_0}$, so $E_{\rm other} = \frac{\sigma}{2\epsilon_0}$.

Just inside: $E_{\rm other} - \frac{\sigma}{2\epsilon_0} = 0$, so $E_{\rm other} = \frac{\sigma}{2\epsilon_0}$. (Consistent.)

Step 3: Compute the average field

The field of "everything else" at the location of the surface charge is the average of the field just above and just below:

$$E_{\rm other} = \frac{1}{2}(E_{\rm above} + E_{\rm below}) = \frac{1}{2}\left(\frac{\sigma}{\epsilon_0} + 0\right) = \frac{\sigma}{2\epsilon_0}$$

Step 4: Compute the force per unit area

The force on a surface element $dA$ carrying charge $\sigma\,dA$ is due to $E_{\rm other}$:

$$dF = \sigma\,dA\cdot E_{\rm other} = \sigma\,dA\cdot\frac{\sigma}{2\epsilon_0}$$

The electrostatic pressure (force per unit area) is:

$$\boxed{P = \frac{dF}{dA} = \frac{\sigma^2}{2\epsilon_0}}$$

Step 5: Express in terms of the field

Since $E_{\rm outside} = \sigma/\epsilon_0$ at the surface, we can write $\sigma = \epsilon_0 E$, and:

$$P = \frac{\sigma^2}{2\epsilon_0} = \frac{\epsilon_0}{2}E^2$$

This is exactly the energy density $u = \epsilon_0 E^2/2$! The electrostatic pressure on a conductor surface equals the local energy density of the field just outside. The force is always outward (pulling the conductor apart), regardless of the sign of $\sigma$.

4.3 Dielectric Materials

In a dielectric, an applied electric field induces a polarization $\mathbf{P}$— a dipole moment per unit volume. For a linear, isotropic dielectric:

$$\mathbf{P} = \epsilon_0 \chi_e \mathbf{E}$$

where $\chi_e$ is the electric susceptibility. The displacement field $\mathbf{D}$ is:

$$\mathbf{D} = \epsilon_0 \mathbf{E} + \mathbf{P} = \epsilon_0(1 + \chi_e)\mathbf{E} = \epsilon_0 \epsilon_r \mathbf{E} = \epsilon \mathbf{E}$$

where $\epsilon_r = 1 + \chi_e$ is the relative permittivity (dielectric constant). Gauss's law in terms of $\mathbf{D}$:

$$\nabla \cdot \mathbf{D} = \rho_f, \qquad \oint_S \mathbf{D} \cdot d\mathbf{a} = Q_{f,\rm enc}$$

where $\rho_f$ is the free charge density (excluding bound charges in the dielectric). A parallel-plate capacitor filled with dielectric has $C = \epsilon_r \epsilon_0 A/d$.

Derivation: Bound Charges in a Dielectric

We show that a polarized dielectric with polarization $\mathbf{P}$ produces an effective bound volume charge density $\rho_b = -\nabla\cdot\mathbf{P}$ and a bound surface charge density $\sigma_b = \mathbf{P}\cdot\hat{n}$.

Step 1: Start with the potential of a polarized material

A small volume $d\tau'$ of dielectric with polarization $\mathbf{P}(\mathbf{r}')$ has dipole moment $d\mathbf{p} = \mathbf{P}\,d\tau'$. The potential of a dipole is $V = \frac{1}{4\pi\epsilon_0}\frac{\mathbf{p}\cdot\hat{\mathscr{r}}}{\mathscr{r}^2}$, so the total potential is:

$$V(\mathbf{r}) = \frac{1}{4\pi\epsilon_0}\int_{\mathcal{V}}\frac{\mathbf{P}(\mathbf{r}')\cdot\hat{\mathscr{r}}}{\mathscr{r}^2}\,d\tau'$$

Step 2: Use the identity $\hat{\mathscr{r}}/\mathscr{r}^2 = \nabla'(1/\mathscr{r})$

The gradient with respect to the source coordinates $\mathbf{r}'$ gives:

$$\nabla'\left(\frac{1}{|\mathbf{r}-\mathbf{r}'|}\right) = \frac{\mathbf{r}-\mathbf{r}'}{|\mathbf{r}-\mathbf{r}'|^3} = \frac{\hat{\mathscr{r}}}{\mathscr{r}^2}$$

So:

$$V(\mathbf{r}) = \frac{1}{4\pi\epsilon_0}\int_{\mathcal{V}}\mathbf{P}(\mathbf{r}')\cdot\nabla'\left(\frac{1}{\mathscr{r}}\right)d\tau'$$

Step 3: Integrate by parts

Using the product rule $\nabla'\cdot(f\mathbf{A}) = f(\nabla'\cdot\mathbf{A}) + \mathbf{A}\cdot(\nabla' f)$, with $f = 1/\mathscr{r}$ and $\mathbf{A} = \mathbf{P}$:

$$\mathbf{P}\cdot\nabla'\left(\frac{1}{\mathscr{r}}\right) = \nabla'\cdot\left(\frac{\mathbf{P}}{\mathscr{r}}\right) - \frac{1}{\mathscr{r}}\nabla'\cdot\mathbf{P}$$

Step 4: Apply the divergence theorem to the first term

$$V = \frac{1}{4\pi\epsilon_0}\left[\int_{\mathcal{V}}\nabla'\cdot\left(\frac{\mathbf{P}}{\mathscr{r}}\right)d\tau' - \int_{\mathcal{V}}\frac{\nabla'\cdot\mathbf{P}}{\mathscr{r}}\,d\tau'\right]$$

By the divergence theorem, the first integral becomes a surface integral:

$$V = \frac{1}{4\pi\epsilon_0}\left[\oint_S \frac{\mathbf{P}\cdot\hat{n}'}{\mathscr{r}}\,da' - \int_{\mathcal{V}}\frac{\nabla'\cdot\mathbf{P}}{\mathscr{r}}\,d\tau'\right]$$

Step 5: Identify the bound charge densities

Comparing with the potentials of surface and volume charge distributions $V = \frac{1}{4\pi\epsilon_0}\oint\frac{\sigma'}{{\mathscr{r}}}\,da' + \frac{1}{4\pi\epsilon_0}\int\frac{\rho'}{{\mathscr{r}}}\,d\tau'$, we read off:

$$\boxed{\sigma_b = \mathbf{P}\cdot\hat{n}} \qquad \boxed{\rho_b = -\nabla\cdot\mathbf{P}}$$

Step 6: Physical interpretation

Where $\nabla\cdot\mathbf{P} \neq 0$, the polarization is non-uniform and the displacement of positive and negative bound charges does not cancel locally — this creates a net volume bound charge. At the surface, the polarization terminates abruptly, leaving uncompensated charges with density $\mathbf{P}\cdot\hat{n}$. For uniform polarization, $\nabla\cdot\mathbf{P} = 0$ and only surface bound charges appear.

Step 7: Verify total bound charge is zero

The total bound charge must vanish (dielectric is neutral):

$$Q_b = \int_{\mathcal{V}}\rho_b\,d\tau + \oint_S\sigma_b\,da = -\int_{\mathcal{V}}\nabla\cdot\mathbf{P}\,d\tau + \oint_S\mathbf{P}\cdot\hat{n}\,da = 0$$

by the divergence theorem. Polarization redistributes charge but does not create or destroy it.

Derivation: The Displacement Field $\mathbf{D}$

We derive Gauss's law in terms of $\mathbf{D}$, showing how it neatly separates free and bound charges.

Step 1: Total charge = free + bound

In a dielectric medium, the total charge density is the sum of free charge (placed deliberately) and bound charge (induced by polarization):

$$\rho_{\rm total} = \rho_f + \rho_b = \rho_f - \nabla\cdot\mathbf{P}$$

Step 2: Write Gauss's law with total charge

Gauss's law always involves the total charge:

$$\nabla\cdot\mathbf{E} = \frac{\rho_{\rm total}}{\epsilon_0} = \frac{\rho_f - \nabla\cdot\mathbf{P}}{\epsilon_0}$$

Step 3: Rearrange to isolate free charge

Multiply through by $\epsilon_0$ and move $\nabla\cdot\mathbf{P}$ to the left:

$$\nabla\cdot(\epsilon_0\mathbf{E}) + \nabla\cdot\mathbf{P} = \rho_f$$

$$\nabla\cdot(\epsilon_0\mathbf{E} + \mathbf{P}) = \rho_f$$

Step 4: Define the displacement field

Define $\mathbf{D} \equiv \epsilon_0\mathbf{E} + \mathbf{P}$. Then Gauss's law takes the elegant form:

$$\boxed{\nabla\cdot\mathbf{D} = \rho_f} \qquad \text{or equivalently} \qquad \boxed{\oint_S\mathbf{D}\cdot d\mathbf{a} = Q_{f,\rm enc}}$$

The displacement field $\mathbf{D}$ "sees" only free charges. Bound charges are automatically accounted for through $\mathbf{P}$.

Step 5: Linear dielectrics — constitutive relation

For a linear, isotropic dielectric, $\mathbf{P} = \epsilon_0\chi_e\mathbf{E}$, so:

$$\mathbf{D} = \epsilon_0\mathbf{E} + \epsilon_0\chi_e\mathbf{E} = \epsilon_0(1+\chi_e)\mathbf{E} = \epsilon_0\epsilon_r\mathbf{E} = \epsilon\mathbf{E}$$

where $\epsilon_r = 1+\chi_e$ is the relative permittivity and $\epsilon = \epsilon_0\epsilon_r$ is the absolute permittivity.

Step 6: Boundary conditions for $\mathbf{D}$

From $\nabla\cdot\mathbf{D} = \rho_f$ and a pillbox argument, the normal component of $\mathbf{D}$ satisfies:

$$D_{\rm above}^\perp - D_{\rm below}^\perp = \sigma_f$$

In the absence of free surface charge ($\sigma_f = 0$), $D^\perp$ is continuous across the interface. Note: $\mathbf{D}$ has no curl equation of its own ($\nabla\times\mathbf{D} \neq 0$ in general when $\mathbf{P}$ has a curl), so $\mathbf{D}$ is less fundamental than $\mathbf{E}$. Its utility lies in symmetric problems where free charge is known.

Simulation: Capacitor with Dielectric Slab

Solves Laplace's equation by finite differences for a parallel-plate capacitor partially filled with a dielectric ($\epsilon_r = 4$), showing how the potential bends at the interface.

Parallel-Plate Capacitor with Dielectric

Finite-difference solution of Laplace's equation in a capacitor with a dielectric slab (ε_r = 4).

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Video Lectures & Demonstrations

MIT 8.02 — Walter Lewin on capacitors, dielectrics, and the energy stored in electric fields, with dramatic demonstrations.

Veritasium explains how capacitors store energy, how dielectrics increase capacitance, and why capacitors are everywhere in modern electronics.

Fortran Implementation

Fortran computation for a multi-layer dielectric capacitor. This type of analysis is essential in designing high-voltage capacitors, MEMS devices, and understanding biological membranes as dielectric layers.

Multi-Layer Dielectric Capacitor

Fortran

Computes capacitance, E-fields, bound charges and energy for a two-layer dielectric capacitor

capacitor_dielectric.f9035 lines

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Griffiths Problem Solutions

Video walkthroughs of Griffiths Chapter 4 problems on electric fields in matter, polarization, and dielectrics.

Problem 4.1

Problem 4.2

Problem 4.3

Problem 4.4

Problem 4.5

Problem 4.6

Video Lectures: Physics of Dielectrics

Electric Dipole: Dipole in External Electric Field

Electric Dipole: Potential & Field Due to a Dipole

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