Part II: Semiconductor Physics | Chapter 5

PN Junctions & Diodes

The fundamental building block of semiconductor devices: a single p-n interface that rectifies, regulates, and switches.

The PN Junction in Equilibrium

When p-type and n-type semiconductors are brought into contact, electrons diffuse from n to p and holes diffuse from p to n. This leaves behind ionised donor/acceptor atoms forming a depletion region โ€” a region swept free of mobile carriers.

p-typemajority: holes (h+)n-typemajority: electrons (e-)depletionregionE fieldBuilt-in potential V_bi ~ 0.6 V (Si)

The electric field in the depletion region creates a built-in potential \( V_{bi} \)that opposes further diffusion, establishing equilibrium:

\[ V_{bi} = \frac{k_B T}{q}\ln\!\left(\frac{N_A N_D}{n_i^2}\right) \]

For silicon with \( N_A = N_D = 10^{16} \;\text{cm}^{-3} \) at 300 K, \( V_{bi} \approx 0.72 \;\text{V} \).

Shockley Diode Equation

Under an applied voltage \( V \), the current through an ideal pn junction is given by the Shockley diode equation:

\[ I = I_s\!\left(\exp\!\frac{V}{nV_T} - 1\right) \]
\( I_s \): saturation current (10โปยนยฒโ€“10โปโน A), \( n \): ideality factor (1โ€“2), \( V_T = k_BT/q \approx 25.85 \text{ mV at 300 K} \)

Forward Bias (\( V > 0 \))

Applied voltage opposes the built-in field, narrowing the depletion region. The exponential term dominates: current rises steeply. Silicon diodes have a threshold of ~0.6โ€“0.7 V.

Reverse Bias (\( V < 0 \))

Widens the depletion region. Current saturates at \( -I_s \) โ€” extremely small. The diode is essentially an open circuit until breakdown.

Breakdown Mechanisms

Zener Breakdown

Quantum tunnelling of electrons across a thin, highly-doped junction at \( |V| < 5 \) V. Sharp, well-defined breakdown voltage; exploited in Zener regulators.

Avalanche Breakdown

Impact ionisation โ€” carriers accelerated by the field collide with the lattice, creating electron-hole pairs that trigger a cascade. Dominant at \( |V| > 7 \) V.

Diode Circuit Applications

Half-Wave Rectifier

A single diode passes only the positive half-cycles of AC. The output is pulsating DC with average value \( V_{avg} = V_m/\pi \).

Full-Wave Bridge Rectifier

Four diodes rectify both half-cycles. Average output \( V_{avg} = 2V_m/\pi \); ripple frequency is doubled, making filtering easier.

Clipper Circuit

Limits the output voltage to a specified level, clipping the signal above (or below) a threshold voltage set by a biased diode.

Clamper Circuit

Shifts the DC level of a signal without changing its shape. A capacitor and diode add or subtract a DC offset equal to the peak voltage.

A large filter capacitor \( C \) placed across the load reduces AC ripple. For half-wave rectification the ripple voltage is approximately\( V_r \approx V_m / (f R_L C) \); for full-wave the factor of \( f \) becomes \( 2f \), halving the ripple.

Python: Diode I-V & Rectifier Simulation

Plot the full Shockley I-V characteristic, then simulate half-wave and full-wave bridge rectifiers with a capacitor filter, computing ripple voltage for each topology.

Shockley Diode I-V and Rectifier Circuits

Python
pn_diode_rectifier.py129 lines

Click Run to execute the Python code

Code will be executed with Python 3 on the server